IGBT Sunbber

Snubber,吸收电容，适用于IGBT缓冲线路的突波吸收， 具有多种规格和安装方式，以满足设计需求。 工作温度 : - 40 至 + 105 ˚C\n容量范围 : 0.0047 至 5.6μF\n额定电压 : 700 至 3000 VDC\n容量偏差 : ± 5% , ± 10%\n损耗因素 : ≤6×10-3 @100Hz 20±5˚C\n预期寿命 : 100,000 小时@Un, 70 ˚C (热点温度)\n极间耐压 : 1.5Un (DC) , （ 10s , 20±5˚C）\n极壳耐压 : (1.5Un+1000)VAC,最小3000VAC（10s，50Hz）\n绝缘电阻 : （ IR×Cn） 30000s（不超;

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon Complementary Transistors Audio Power Amplifier

Silicon Complementary Transistors Audio Power Amplifier

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current 300A •VCEX Collector-emitter voltage 600V •hFE DC current gain 750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current 300A •VCEX Collector-emitter voltage 600V •hFE DC current gain 750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

Silicon planar type

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