HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42G and STBV4

Silicon NPN transistor in a TO-92 Plastic Package.

文件：837.69 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 400V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GaN HEMT 50V, 130W,3.7-4.2GHz Full band RF Power Transistor

Description The STBV42130C9 is a dual path 130watt,Internally matched GaN HEMT, ideal for applications from 3.7 to 4.2GHz full band operation especially for LTE/5G. There is no guarantee of performance when this part is used outside of stated frequencies. Applications  Asymmetrical Doherty

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

Silicon NPN transistor in a TO-92 Plastic Package

文件：848.89 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个