isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=47A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 34mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印代码：75NF20；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

N沟道200 V、0.028 Ohm典型值、75 A STripFET(TM) 功率MOSFET，D2PAK封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters • Exceptional dv/dt capability \n• 100% Avalanche tested \n• Low gate charge;

N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

丝印代码：75NF20；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

丝印代码：75NF20；N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max)@VGS= 10V ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.