型号 功能描述 生产厂家&企业 LOGO 操作
STB75N20

N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

STMICROELECTRONICS

意法半导体

STB75N20

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.034Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters ■ Exceptional dv/dt

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.034Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

文件:484.28 Kbytes Page:7 Pages

HMSEMI

华之美半导体

STB75N20产品属性

  • 类型

    描述

  • 型号

    STB75N20

  • 功能描述

    MOSFET POWER MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-7 18:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
06+
TO-263
980
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
06+
TO-263
980
STMicroelectronics
21+
D2PAK
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
ST
23+
TO-263
8795
ST
05+
TO-263
8000
原装进口
ST
25+23+
TO-263
27657
绝对原装正品全新进口深圳现货
ST/意法
23+
TO-263
30000
全新原装现货,价格优势
ST
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ST/意法
23+
TO263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
1800

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