0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION\nThe STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD pac

Integrated Circuit AF Power Amplifier, 7W

Description: The NTE7101 is an audio power amplifier in an 8–Lead SIP type package designed for use in car radio and car stereo applications. This device features a low thermal resistance providing easy design for 2Ω load circuits and 4Ω load BTL circuits. Features: • High Output Power:

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

Tiny Low Power Operational Amplifier with Rail-To-Rail Input and Output

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LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages