N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.028Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■LOWLEAKAGECURRENT ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas