Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass passivated die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 400 A Surge Rating ● Available as common anode, common cathode, or doubleer

Silicon Dual Power Rectifier

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode and Rectifier Devices

Silicon Dual Power Rectifier

文件：178.76 Kbytes Page：3 Pages

Silicon Dual Power Rectifier

文件：178.76 Kbytes Page：3 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 阵列

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D