位置：首页 > IC中文资料第5511页 > ST3406
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ST3406 | N Channel Enhancement Mode MOSFET DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app | STANSON 司坦森 |   | |
ST3406 | N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | |
ST3406 | Tranch MOSFET | STANSON 司坦森 | | |
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N Channel Enhancement Mode MOSFET DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app | STANSON 司坦森 | | ||
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage | STANSON 司坦森 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel Enhancement Mode MOSFET 5.4A | STANSON 司坦森 | | ||
Tranch MOSFET | STANSON 司坦森 | | ||
200 V - 1,000 V Three Phase Bridge 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time | VMI | | ||
200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time | VMI | | ||
200 V - 1,000 V Three Phase Bridge 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
DREHZAHLMESSER 文件：1.01023 Mbytes Page：2 Pages | ASM-SENSOR | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | |
ST3406产品属性
- 类型
描述
- 型号
ST3406
- 制造商
STANSON
- 制造商全称
STANSON
- 功能描述
N Channel Enhancement Mode MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
SOP8 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
STANSONTECH |
新年份 |
SOT-23 |
45000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
STANSON |
23+ |
SOT-23L |
50000 |
原装正品 支持实单 |
|||
ST |
25+ |
SOT-23 |
16900 |
原装，请咨询 |
|||
ST/意法 |
25+ |
SOP8 |
30000 |
代理原装现货,假一赔十 |
|||
STANSON |
24+ |
SOT-23L |
9600 |
原装现货,优势供应,支持实单! |
|||
STANSON |
24+ |
NA/ |
6250 |
原厂直销,现货供应,账期支持! |
|||
STANSON |
23+ |
SOT-23 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
STANSON |
2025+ |
SOT-23 |
5000 |
原装进口,免费送样品! |
|||
ST |
23+ |
SOP8 |
8000 |
只做原装现货 |
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ST3406规格书下载地址
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ST3406数据表相关新闻
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2013-1-12
DdatasheetPDF页码索引
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