NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ●

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.75 W (Tamb = 25°C) Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use as AF output amplifier and flash unit.