NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ● Low VCE(sat) ● Excellent current gain characteristics

TRANSISTOR (NPN)

FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

NPN Epitaxial Planar Silicon Transistor

FEATURES ● Low VCE(sat). VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585.

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

Low Frequency Transistor

■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=20V ● Complements to 2SA1585