PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.6 W (Tamb=25℃) Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for low-frequency power amplifier applications.

PNP Plastic Encapsulated Transistor

* 1W output applications * Complementary to 2SC2120

TO-92 Plastic-Encapsulate Transistors (PNP)

FEATURES 1W Output Applications Complementary to 2SC2120

Audio Power Amplifier Applications

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