PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Features: ● Large current capacity and wide ASO. Applications: ● Capable of being used in the low frequenc

PNP Plastic Encapsulated Transistor

FEATURES Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO.

GENERAL PURPOSE AMP, SWITCHING APPLICATIONS

PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 400 mW (Tamb=25℃) Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications Applications · Capable of being used in the low frequency to high frequency range. Features · Large current capacity and wide ASO.

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 400 mW (Tamb=25℃) Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃