PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base

TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −

PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFELinearity. * hFE(1)=140-600, (VCE= -1V,IC= -0.5A) * hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) * Low Saturation Voltage * VCE (SAT

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

Strobe Flash Applications Medium Power Amplifier Applications

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