PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forstroboflashandmediumpoweramplifier applications. Thetransistorissubdividedintothreegroups,Y,G andL,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforuseStrobeflashandmediumpower amplifierapplications. Pinning 1=Emitter 2=Collector 3=Base

TRANSISTOR(STROBOFLASHMEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140~600(VCE=−1V,IC=−0.5A) :hFE(2)=60(min),120(typ.)(VCE=−1V,IC=−4A) •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−2A,IB=−

PNPEPITAXIALSILICONTRANSISTOR

SILICONPNPEPITAXALTYPE DESCRIPTION *StroboFlashApplications. *MediumPowerAmplifierApplications. FEATURES *HighDCCurrentGainandExcellenthFELinearity. *hFE(1)=140-600,(VCE=-1V,IC=-0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE=-1V,IC=-4A) *LowSaturationVoltage *VCE(SAT

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ:150℃ Tstg:-55℃to+150℃

StrobeFlashApplicationsMediumPowerAmplifierApplications

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