N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage app

Tranch MOSFET

N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage app

N-Channel 20 V (D-S) MOSFET

文件：1.05185 Mbytes Page：9 Pages

N Channel Enhancement Mode MOSFET

文件：484.65 Kbytes Page：7 Pages

Tranch MOSFET

N Channel Enhancement Mode MOSFET

文件：484.65 Kbytes Page：7 Pages

Bobbin Wound Surface Mount Inductors

DESCRIPTION The 2300 series is a range of bobbin wound surface mount inductors designed for use in switching power supply and power line filter circuits. The parts are suitable for any application requiring a high saturation current in a miniature surface mount footprint. Where EMI is a critical

1/4 JACK BLOCKS

文件：21.26 Kbytes Page：1 Pages

6.0A竊?0V N-CHANNEL MOSFET

文件：311 Kbytes Page：5 Pages

KNOBS AND DIAL PLATES

文件：47.25 Kbytes Page：2 Pages

2300 SERIES MULTI-POLE REED RELAYS

文件：632.54 Kbytes Page：2 Pages