TO-252 Package design

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N-Channel 100 V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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Tranch MOSFET

N-Channel 100-V (D-S) MOSFET

Features ® Ros 10m0@VGS=10vV ® Super high density cell design for extremely low Ros) | ® Exceptional on-resistance and maximum DC current

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 120mW @VGS = 10V. RDS(ON) = 135mW @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.