Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m

Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM

DESCRIPTION This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The m