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SST39VF200价格

参考价格：￥5.9751

型号：SST39VF200A-70-4C-EKE 品牌：Microchip 备注：这里有SST39VF200多少钱，2026年最近7天走势，今日出价，今日竞价，SST39VF200批发/采购报价，SST39VF200行情走势销售排行榜，SST39VF200报价。

型号	功能描述	生产厂家企业	LOGO
SST39VF200A	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4C-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4C-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4E-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4E-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4I-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-45-4I-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4C-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4C-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4E-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4E-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4I-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-55-4I-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-B3KE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-EKE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-M1Q	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4C-M1QE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4E-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4E-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-B3KE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-EKE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-M1Q	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-70-4I-M1QE	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4C-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4C-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4C-U1	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4E-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4E-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4I-B3K	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A-90-4I-EK	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain be	SST Silicon Storage Technology, Inc	SST
SST39VF200A	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash 文件：862.74 Kbytes Page：31 Pages	SST Silicon Storage Technology, Inc	SST
SST39VF200A	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash 文件：4.11758 Mbytes Page：37 Pages	Microchip 微芯科技	Microchip
SST39VF200A	2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH 文件：343.53 Kbytes Page：20 Pages	SST Silicon Storage Technology, Inc	SST
SST39VF200A	2Mb 2.7-3.6V Parallel Flash	Microchip 微芯科技	Microchip
SST39VF200A-70-4C-B3KE-T	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC FLASH 2MBIT PARALLEL 48TFBGA 集成电路（IC）存储器	Microchip 微芯科技	Microchip
SST39VF200A-70-4C-EKE	封装/外壳：48-TFSOP（0.724"，18.40mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC FLASH 2MBIT PARALLEL 48TSOP 集成电路（IC）存储器	Microchip 微芯科技	Microchip

SST39VF200产品属性

类型
描述
型号
SST39VF200
功能描述
闪存 128K X 16 70ns
RoHS
否
制造商
ON Semiconductor
数据总线宽度
1 bit
存储类型
Flash
存储容量
2 MB
结构
256 K x 8
接口类型
SPI
电源电压-最大
3.6 V
电源电压-最小
2.3 V
最大工作电流
15 mA
工作温度
- 40 C to + 85 C
安装风格
SMD/SMT
封装
Reel

SST39VF200供应商更多...

更新时间：2026-1-4 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	SST39VF3201-70-4C-B3K	SST	24+	NA/	7246	原厂直销,现货供应,账期支持!	询价
深圳市明嘉莱科技有限公司	SST39VF3201	SST	24+	TSSOP-48	880000	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	SST39VF3201-70-4C-B3K	SST		BGA	125000	一级代理原装正品,价格优势,长期供应!	询价
深圳市凌旭科技有限公司	SST39VF3201-70-4C-B3K	SST	21+	BGA	3996	只做原装,一定有货,不止网上数量,量多可订货!	询价
深圳市诺美思科技有限公司	SST39VF3201-70-4C-B3K	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市正纳电子有限公司	SST39VF3201	SST	ROHS+Original	NA	22904	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
深圳市欧立现代科技有限公司	SST39VF3201-70	SST	24+		6868	原装现货,可开13%税票	询价
深圳市正迈科技有限公司	SST39VF3201	SST	23+	NA	12542	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市福田区绿盛电子商行	SST39VF320	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市胜彬电子有限公司	SST39VF3201-70-4C-B3K	SST	22+	BGA	3000	原装正品,支持实单	询价

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SST39VF200价格

SST39VF200产品属性

SST39VF200供应商更多...

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SST39VF3201-70-4I-EKE NOR闪存

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SST39VF800A-70-4C-EKE原装现货

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

DdatasheetPDF页码索引