丝印代码：3215；N-Ch Enhancement Mode Power MOSFET

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MosFET

MosFET

丝印代码：3215B；N-Ch Enhancement Mode Power MOSFET

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150mA CMOS High Performance LDO

General Description The AAT3215 MicroPower™ low dropout (LDO) linear regulator is ideally suited for portable applications where low noise, extended battery life, and small size are critical. The AAT3215 has been specifically designed for very low output noise performance, fast transient response

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). • High allowable po

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The package is 6-pin s

Ultra-fast POWERplanar??Rectifiers 32 A, 50-200V

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