DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). • High allowable po

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

双极晶体管，(-)30V，(-)1.5A，低饱和压，(PNP)NPN 单 CPH3

CPH3215 is Bipolar Transistor, (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3 for DC-DC Converter Applications. • Adoption of MBIT processes\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)\n• High allowable power dissipation\n• Halogen free compliance;

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

封装/外壳：SC-96 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1.5A 3CPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 30V 1.5A 3CP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

150mA CMOS High Performance LDO

General Description The AAT3215 MicroPower™ low dropout (LDO) linear regulator is ideally suited for portable applications where low noise, extended battery life, and small size are critical. The AAT3215 has been specifically designed for very low output noise performance, fast transient response

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The package is 6-pin s

Ultra-fast POWERplanar??Rectifiers 32 A, 50-200V

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