位置：首页 > IC中文资料第7508页 > SST29LF010-200-4I-NH
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29LF010-200-4I-NH | 2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | |
SST29LF010-200-4I-NH产品属性
- 类型
描述
- 型号
SST29LF010-200-4I-NH
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
2 Mbit(256K x8) Page-Mode EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
25+ |
PLCC |
4500 |
原装正品!公司现货!欢迎来电! |
|||
ST |
22+ |
PLCC32 |
8000 |
原装现货库存.价格优势 |
|||
SST |
23+ |
TSSOP |
2566 |
原厂原装正品 |
|||
SST |
21+ |
TSSOP32 |
10000 |
原装现货假一罚十 |
|||
SST |
2022+ |
PLCC32 |
15000 |
原厂代理 终端免费提供样品 |
|||
SST |
24+ |
PLCC |
36520 |
一级代理/放心采购 |
|||
SST/超捷 |
2450+ |
PLCC |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SST |
12+ |
PLCC32 |
10400 |
原装现货/特价 |
|||
SST |
23+ |
TSSOP32 |
50000 |
全新原装正品现货,支持订货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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2019-8-29
DdatasheetPDF页码索引
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