位置：首页 > IC中文资料第7506页 > SST29EF010-120-4I-NH
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EF010-120-4I-NH | 2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
2 Mbit (256K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | |
SST29EF010-120-4I-NH产品属性
- 类型
描述
- 型号
SST29EF010-120-4I-NH
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
2 Mbit(256K x8) Page-Mode EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
0653+ |
18 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
SST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SST |
24+ |
PLCC |
16800 |
绝对原装进口现货 假一赔十 价格优势! |
|||
SST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
SST |
2025+ |
TSOP |
5378 |
全新原厂原装产品、公司现货销售 |
|||
SST |
2517+ |
8850 |
只做原装正品现货或订货假一赔十! |
||||
SST |
22+ |
20000 |
公司只做原装 品质保证 |
||||
SST |
PLCC |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SST |
22+ |
DIP32 |
3000 |
原装正品,支持实单 |
|||
SST |
22+ |
PLCC |
8000 |
原装现货库存.价格优势 |
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DdatasheetPDF页码索引
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