型号 功能描述 生产厂家 企业 LOGO 操作
SST29EE010A-90-4I-E

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

SST29EE010A-90-4I-E产品属性

  • 类型

    描述

  • 型号

    SST29EE010A-90-4I-E

  • 制造商

    SST

  • 制造商全称

    Silicon Storage Technology, Inc

  • 功能描述

    1 Megabit(128K x 8) Page Mode EEPROM

更新时间:2026-2-1 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
24+
PLCC
37888
只做原装 公司现货库存
SST
23+
PLCC
50000
全新原装正品现货,支持订货
SST
24+
PLCC32
5000
全新原装正品,现货销售
SST
23+
TSSOP-32
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
2025+
TSSOP-32
5000
原装进口,免费送样品!
SST
2447
PLCC32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
23+
PLCC
50000
全新原装正品现货,支持订货
24+
50
本站现库存
SST
23+24
DIP-
9680
原盒原标.进口原装.支持实单 .价格优势
SST
22+
PLCC
2000
原装正品现货

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