P-Channel Enhancement Mode Power Mos.FET

Description The SST2625 utiltzed advance processing techniques to achieve the lowest The SST2625 is universally used for all commercial-industrial applications. possible on-resistance, extermely efficient and cost-effectiveness device. Features * Low On-Resistance * Low Gate Charge

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

40 Gbits/s Lithium Niobate Electro-Optic Modulator

Description Representing the latest advancements in high-speed lithium niobate technology, the 40 Gbits/s electrooptic modulator is designed for long-wavelength, single-mode, external amplitude modulation applications. It uses an integrated Mach-Zehnder configuration to convert single polarizatio

Large Dome Plugs

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Bandpass Filter

文件：62.55 Kbytes Page：2 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：96.12 Kbytes Page：5 Pages

Dual P-Channel 20 V (D-S) MOSFET

文件：1.0825 Mbytes Page：9 Pages