FAST DMOS FET Switches N-Channel Enhancement-Mode

DESCRIPTION Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogic’s proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical ove

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

FAST DMOS FET Switches N-Channel Enhancement-Mode

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N-Channel Lateral DMOS FETs

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DMOS Switches

N-Channel DMOS Switch - Zener Protected

N-Channel DMOS Switch - Zener Protected

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Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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