丝印代码：P06；P-Channel JFET Switch

FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching APPLICATIONS • Analog Switches • Choppers • Commutators

SINGLE P-CHANNEL JFET SWITCH

FEATURES • Direct Replacement For SILICONIX J/SST174 SERIES • LOW ON RESISTANCE rDS(on) ≤ 85Ω • LOW GATE OPERATING CURRENT ID(off) = 10pA

P-Channel JFETs

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P-Channel JFETs

文件：81.01 Kbytes Page：7 Pages

P-Channel JFETs

文件：62.11 Kbytes Page：7 Pages

Linear Systems replaces discontinued Siliconix SST176

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JFET Switches

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：P-CHANNEL, SINGLE, JFET SWITCH 分立半导体产品 晶体管 - JFET

a single P-Channel JFET switch

文件：302.36 Kbytes Page：1 Pages

P-Channel JFETs

文件：62.11 Kbytes Page：7 Pages

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.