N-Channel JFET Switch

FEATURES • Low Cost • Automated Insertion Package • Low Insertion Loss • No Offset or Error Voltage Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Fast Switching • Short Sample and Hold Aperture Time APPLICATIONS • Analog Switches • Chopper

SINGLE N-CHANNEL JFET

FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns

Linear Systems replaces discontinued Siliconix SST113

JFET Switches

JFET Switches

丝印代码：C3；N-Channel JFETs

文件：58.45 Kbytes Page：6 Pages

丝印代码：C3；N-Channel JFETs

文件：58.45 Kbytes Page：6 Pages

Linear Systems replaces discontinued Siliconix SST113

文件：288.59 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：N-CH JFET SWITCHES 分立半导体产品 晶体管 - JFET

N-CHANNEL JFET

文件：288.59 Kbytes Page：1 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages