N-CHANNEL POWER MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 800V Low RDS(ON) : 1.472 W(Typ.)

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO