FQP7N80价格
参考价格:¥4.8825
型号:FQP7N80C 品牌:Fairchild 备注:这里有FQP7N80多少钱,2026年最近7天走势,今日出价,今日竞价,FQP7N80批发/采购报价,FQP7N80行情走势销售排行榜,FQP7N80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP7N80 | 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | ||
FQP7N80 | 800V N-Channel MOSFET | ONSEMI 安森美半导体 | ||
功率 MOSFET,N 沟道,QFET®,800 V,7 A,1.9 Ω,TO-220 该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正(PFC)及照明灯电子镇流器。 •6.6A, 800V, RDS(on)= 1.9Ω(最大值)@VGS = 10 V, ID = 3.3A栅极电荷低(典型值:27nC)\n•低 Crss(典型值10pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested; | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
6.6A,800V Heatsink Planar N-Channel Power MOSFET General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Convert | THINKISEMI 思祁半导体 | |||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
800V N-Channel MOSFET Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | |||
800V N-Channel MOSFET Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | |||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO | MOTOROLA 摩托罗拉 |
FQP7N80产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
800
- VGS Max (V):
±30
- VGS(th) Max (V):
5
- ID Max (A):
6.6
- PD Max (W):
167
- RDS(on) Max @ VGS = 10 V(mΩ):
1900
- Qg Typ @ VGS = 10 V (nC):
27
- Ciss Typ (pF):
1290
- Package Type:
TO-220-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-220(TO-220-3) |
10000 |
十年沉淀唯有原装 |
|||
FAIRCHILD/仙童 |
2403+ |
TO220 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
FAIRC |
2023+ |
TO-220 |
50000 |
原装现货 |
|||
FAIRCHI |
23+ |
TO-220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ON/安森美 |
21+ |
TO-220(TO-220-3) |
8080 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
45000 |
FAIRCHILD/仙童全新现货FQP7N80C即刻询购立享优惠#长期有排单订 |
|||
FAIRCHILD |
24+ |
TO-220 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
Freescale |
23+ |
NA |
6800 |
原装正品,力挺实单 |
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FQP7N80规格书下载地址
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