800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

功率 MOSFET，N 沟道，QFET®，800 V，7 A，1.9 Ω，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •6.6A, 800V, RDS(on)= 1.9Ω（最大值）@VGS = 10 V, ID = 3.3A栅极电荷低（典型值：27nC)\n•低 Crss（典型值10pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

6.6A,800V Heatsink Planar N-Channel Power MOSFET

General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Convert

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

800V N-Channel MOSFET

Features • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 19 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO