800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

6.6A,800V Heatsink Planar N-Channel Power MOSFET

General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Convert

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

功率 MOSFET，N 沟道，QFET®，800 V，7 A，1.9 Ω，TO-220

7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

Drain Current ID= 7A@ TC=25C

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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