仪表总线收发器

SSP721A是满足仪表总线标准（ENI434-3）的芯片收发器，内部接口电路可以适应仪表总线结构中主从机之间的不同电平，与总线的连接是无极限的，且支持使用光耦与从机间进行全电隔离。芯片可由总线供电，对从机不增加功率需求，并内置总线电压故障指示。接收器有动态电平识别功能，发送器有可编程电流沉。片内集成3.3V稳压源，当总线发生故障时将会延迟关段。该电路广泛应用于M-BUS远程抄表、安防、智能家居等领域。 • 符合ENI434-3通信标准\r\n• 调制电流大小通过外围电阻调节\r\n• 欠压指标功能\r\n• 集成3.3V稳压电源\r\n• 最高9600波特的半双工UART通信速率\r\n• 支持多种从机供电方式；\r\n -通过VDD端由总线；\r\n -通过VDD端由总线，同时电池备用；\r\n -电池供电，总线仅用于数据传输；;

低压差稳压电路

仪表总线收发器

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

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