N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤600mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IscN-ChannelMOSFETTransistor

•FEATURES •DrainCurrentID=7.6A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switching

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomp

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

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CoolMOSPowerTransistor

文件：620.29 Kbytes Page：11 Pages