型号 功能描述 生产厂家 企业 LOGO 操作
SSM6N62TU

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

TOSHIBA

东芝

SSM6N62TU

Power Management Switches

文件:335.53 Kbytes Page:8 Pages

TOSHIBA

东芝

SSM6N62TU

Small Low ON resistance MOSFETs

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 84 mΩ (t

TOSHIBA

东芝

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件:227.32 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件:333.17 Kbytes Page:2 Pages

ISC

无锡固电

E Series Power MOSFET

文件:184.88 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

更新时间:2026-1-5 21:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
19+
UDFN6
48000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
24+/25+
177000
原装正品现货库存价优
Toshiba Semiconductor and Stor
25+
6-SMD 扁平引线
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TOSHIBA/东芝
2223+
UDFN6
26800
只做原装正品假一赔十为客户做到零风险
TOSHIBA
22+
SC70
3000
原装正品,支持实单
TOSHIBA/东芝
2025+
UF6
5000
原装进口,免费送样品!
TOSHIBA/东芝
21+
SOT-363SC70-6UF6
10000
原装现货假一罚十
TOSHIBA
23+
SC70
9000
原装正品,假一罚十
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA/东芝
2023+
UDFN6
48000
专注全新正品,优势现货供应

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