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SSM6N55NU,LF价格
参考价格：￥1.3098
型号：SSM6N55NU,LF 品牌：Toshiba 备注：这里有SSM6N55NU,LF多少钱，2025年最近7天走势，今日出价，今日竞价，SSM6N55NU,LF批发/采购报价，SSM6N55NU,LF行情走势销售排行榜，SSM6N55NU,LF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | ||
Fast Switching Speed 文件：70.87 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power Field Effect Transistor 文件：91.92 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Field Effect Transistor 文件：91.92 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Field Effect Transistor 文件：232.57 Kbytes Page：6 Pages | Motorola 摩托罗拉 | |
SSM6N55NU,LF产品属性
- 类型
描述
- 型号
SSM6N55NU,LF
- 功能描述
MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
NEW |
TO-218 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
MTH6N85 |
25+ |
375 |
375 |
||||
ON/安森美 |
23+ |
TO-3P |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON/安森美 |
TO-3P |
22+ |
6000 |
十年配单,只做原装 |
|||
ON |
24+ |
N/A |
2500 |
||||
ON |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MOT |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ON |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
MIT |
23+ |
TO-3P |
3000 |
原装正品假一罚百!可开增票! |
|||
ON/安森美 |
22+ |
TO-3P |
99448 |
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2019-12-23
DdatasheetPDF页码索引
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