Power Management Switch Applications

Power Management Switch Applications High-Speed Switching Applications • 1.8-V drive • N–ch , P–ch 2–in–1 • Low ON–resistance: Nch RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V) • RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V) • : Pch RD

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

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Small-signal MOSFET 2 in 1

TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

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Transient Voltage Suppressors (TVS)

Features ■ Glass passivated chip junction in SMAF Package ■ Excellent clamping capability ■ 600W peak pulse power capability on 10/1000μs waveform ■ Fast response time: typically less than 1.0ps from 0 Volts to BV min ■ High temperature soldering guaranteed: 265℃/10 seconds ■ Matte tin lead-

The SMA6L series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events

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SMA6L Series

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

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