PowerManagementSwitchApplications

PowerManagementSwitchApplications High-SpeedSwitchingApplications •1.8-Vdrive •N–ch,P–ch2–in–1 •LowON–resistance:NchRDS(ON)=235mΩ(max)(@VGS=1.8V) •RDS(ON)=178mΩ(max)(@VGS=2.5V) •:PchRD

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAField-EffectTransistorSiliconP/NChannelMOSType

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TOSHIBAField-EffectTransistorSiliconP/NChannelMOSType

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TransientVoltageSuppressors(TVS)

Features ■GlasspassivatedchipjunctioninSMAFPackage ■Excellentclampingcapability ■600Wpeakpulsepowercapabilityon10/1000μswaveform ■Fastresponsetime:typicallylessthan1.0psfrom0VoltstoBVmin ■Hightemperaturesolderingguaranteed:265℃/10seconds ■Mattetinlead-

TheSMA6Lseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents

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SMA6LSeries

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SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS

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