Field Effect Transistor Silicon P Channel MOS Type (?-MOS?? High speed switching DC-DC Converter

○ High-speed switching ○ DC-DC Converter • Small package • Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V) : R DS(ON) = 420 mΩ (max) (@VGS = 4 V) • High-speed switching: ton = 19 ns (typ.) : toff = 10 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf