TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

DC-DC Converter High Speed Switching Applications • Small Package • Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.5 V) • High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Silicon N Channel MOS Type DC-DC Converter

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