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50 A, 600 V Fast Power IGBT

• 600 V IGBT Technology\n• Positive Temperature Coefficient for Ease of Paralleling\n• High Current Switching for Motor Drives and Inverters\n• Low Saturation Voltage at High Currents\n• Low Switching Losses\n• High Short Circuit Capability\n• MOS Input, Voltage Controlled\n• Ultra Fast Free Wheelin;

SSDI

50 A, 600 V Fast Power IGBT

• 600 V IGBT Technology\n• Positive Temperature Coefficient for Ease of Paralleling\n• High Current Switching for Motor Drives and Inverters\n• Low Saturation Voltage at High Currents\n• Low Switching Losses\n• High Short Circuit Capability\n• MOS Input, Voltage Controlled\n• Ultra Fast Free Wheelin;

SSDI

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, p

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N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

VBSEMI

微碧半导体

P-Channel Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,

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N-Channel Enhancement Mode Power Mos.FET

文件:684.02 Kbytes Page:4 Pages

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N-Channel Enhancement Mode Power Mos.FET

文件:684.02 Kbytes Page:4 Pages

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Dual-N Enhancement Mode Power MOSFET

文件:823.24 Kbytes Page:4 Pages

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Dual N-Channel 30-V (D-S) MOSFET

文件:1.02752 Mbytes Page:9 Pages

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微碧半导体

Dual N-Channel MOSFET uses advanced trench technology

文件:1.40925 Mbytes Page:5 Pages

DOINGTER

杜因特

MosFET

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Dual-N Enhancement Mode Power MOSFET

文件:823.24 Kbytes Page:4 Pages

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50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

50 AMP 600 VOLTS FAST POWER IGBT

文件:31.41 Kbytes Page:2 Pages

SSDI

N-Ch Enhancement Mode Power MOSFET

文件:508.33 Kbytes Page:4 Pages

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N-Channel MOSFET uses advanced trench technology

文件:1.20804 Mbytes Page:4 Pages

DOINGTER

杜因特

N-Ch Enhancement Mode Power MOSFET

文件:508.33 Kbytes Page:4 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:474.68 Kbytes Page:4 Pages

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N-Channel 200 V (D-S) MOSFET

文件:1.65752 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:474.68 Kbytes Page:4 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:542.83 Kbytes Page:4 Pages

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N-Channel 200 V (D-S) MOSFET

文件:1.00173 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 150 V (D-S) MOSFET

文件:1.89664 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:497.36 Kbytes Page:4 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:497.36 Kbytes Page:4 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:466.62 Kbytes Page:4 Pages

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N-Channel 150 V (D-S) MOSFET

文件:1.89665 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

文件:466.62 Kbytes Page:4 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:471.95 Kbytes Page:4 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:466.27 Kbytes Page:4 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:601.94 Kbytes Page:4 Pages

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N-Channel MOSFET uses advanced trench technology

文件:1.27545 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Ch Enhancement Mode Power MOSFET

文件:601.94 Kbytes Page:4 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:965.19 Kbytes Page:3 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:928.83 Kbytes Page:4 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:965.19 Kbytes Page:3 Pages

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丝印代码:Q4406;N-Ch Enhancement Mode Power MOSFET

文件:381.47 Kbytes Page:3 Pages

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丝印代码:Q4406;N-Ch Enhancement Mode Power MOSFET

文件:283.77 Kbytes Page:3 Pages

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P-Channel Enhancement Mode Power Mos.FET

文件:473.73 Kbytes Page:4 Pages

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丝印代码:Q4407;P-Ch Enhancement Mode Power MOSFET

文件:81.8 Kbytes Page:2 Pages

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丝印代码:Q4407;P-Ch Enhancement Mode Power MOSFET

文件:262.58 Kbytes Page:3 Pages

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P-Channel 30-V (D-S) MOSFET

文件:1.84554 Mbytes Page:9 Pages

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微碧半导体

-15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET

文件:548.39 Kbytes Page:4 Pages

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P-Ch Enhancement Mode Power MOSFET

文件:548.39 Kbytes Page:4 Pages

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P-Channel Mode Power MOSFET

文件:130.18 Kbytes Page:2 Pages

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P-Channel 30-V (D-S) MOSFET

文件:1.82843 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Mode Power MOSFET

文件:130.18 Kbytes Page:2 Pages

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N-Channel Enhancement Mode Power Mos.FET

文件:327.75 Kbytes Page:5 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:840.04 Kbytes Page:5 Pages

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N-Ch Enhancement Mode Power MOSFET

文件:840.04 Kbytes Page:5 Pages

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丝印代码:Q4410;N-Channel Enhancement Mode Power MOSFET

文件:304.36 Kbytes Page:3 Pages

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丝印代码:Q4410;N-Channel Enhancement Mode Power MOSFET

文件:307.71 Kbytes Page:3 Pages

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SSG4产品属性

  • 类型

    描述

  • Type:

    N

  • VDSS (V):

    30

  • VGS (V):

    ± 20

  • RDS(on)(Ohms):

    14 (mΩ)

  • ID (A):

    10

  • PD (W):

    2

  • Package:

    SOP-8

更新时间:2026-5-24 9:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
22+
SOP-8
20000
公司只做原装 品质保证
MAKOSEMI
23+
SOT-23
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
TE
2026+
SMT
300000
济德96T0-28260替代SSG051L2AQ
VBsemi
25+
SOP8
18000
假一赔百原装正品价格优势实单可谈
26+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
Secos
20+
SOP-8
38900
原装优势主营型号-可开原型号增税票
SECOS
17+
SOP
6200
100%原装正品现货
OMRON
23+
NA
256
专做原装正品,假一罚百!
OMRON/欧姆龙
2608+
/
337362
一级代理,原装现货
TE
25+
100
原厂现货渠道

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