30V N-Channel MOSFET

DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON)

PWM applications

DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON)

MOSFET

Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

25V N-Chanel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

30V N-Channel MOSFET

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MOSFET

25V N-Chanel MOSFET

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320 mA Switched Capacitor Voltage Doubler

GENERAL DESCRIPTION The ADP3610 is a push-pull switched-capacitor converter voltage doubler. The term “push-pull” refers to two charge pumps working in parallel and in opposing phase to deliver charge to support the output voltage. When one capacitor is pumping charge to the output, the other is

320 mA Switched Capacitor Voltage Doubler

GENERAL DESCRIPTION The ADP3610 is a push-pull switched-capacitor converter voltage doubler. The term “push-pull” refers to two charge pumps working in parallel and in opposing phase to deliver charge to support the output voltage. When one capacitor is pumping charge to the output, the other is

Silicon Power Rectifier

Silicon Power Rectifier • Low thermal resistance • Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal construction • VRRM to 1200 V • Excellent reliability

0.300-INCH SEVEN SEGMENT DISPLAYS

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Dual Schottky Diode Bridge

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