20V Dual N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

High Power and current handing capability

DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

MOSFET

High Power and current handling capability

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

20V Dual N-Channel MOSFET

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MOSFET

20V Dual N-Channel MOSFET

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20V Dual N-Channel MOSFET

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single-chip voice synthesizing CMOS IC

GENERAL DESCRIPTION: The AVH316K , AV0716K , AV1416K , AV2116K , AV2816K and AV4216K are single-chip voice synthesizing CMOS IC. They are low cost with proper functions and can synthesize voice up to 3.5, 7, 14, 21, 28 and 42 seconds, using Aplus 5-bit LOGPCM algorithm. om er speech data can be C

5 Volt, Byte Alterable E2PROM

DESCRIPTION The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C features the JEDEC approved pinout for byte-wide memories, compatible with ind

ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module

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SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

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Electrically Erasable PROM

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