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型号 功能描述 生产厂家 企业 LOGO 操作
SSF2312

20V N-Channel MOSFET

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

GOOD-ARK

固锝电子

SSF2312

Battery protection

DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

SILIKRON

新硅能微电子

SSF2312

MOSFET

SILIKRON

新硅能微电子

20V N-Channel MOSFET

文件:307.54 Kbytes Page:4 Pages

GOOD-ARK

固锝电子

MOSFET

SILIKRON

新硅能微电子

9-bit 20MSPS Video A/D Converter

Description The CXD2312R is a 9-bit CMOS A/D converter for video applications. This IC is ideally suited for the A/D conversion of video signals in TVs, VCRs, camcorders, etc. Features • Resolution: 9-bit ±0.5 LSB (D.L.E.) • Maximum sampling frequency: 20MSPS • Low power consumption: 130mW (a

SONYSony Corporation

索尼

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter

NTE

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

RFMD

威讯联合

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

RFMD

威讯联合

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

SSF2312产品属性

  • 类型

    描述

  • 型号

    SSF2312

  • 制造商

    SILIKRON

  • 制造商全称

    SILIKRON

  • 功能描述

    Battery protection

更新时间:2026-5-24 16:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SILICON LABS/芯科
2025+
SOT-23
5000
原装进口,免费送样品!
SS
25+
SOT23
11435
原装正品现货库存假一赔十欢迎询价
SILICON LABS/芯科
22+
SOT-23
20000
只做原装
量大可定Silikron
20+
SOT23-3
49000
原装优势主营型号-可开原型号增税票
SILIKRON
20+
SOT-23
9269
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SILIKRON
23+
SOT-23
50000
全新原装正品现货,支持订货
原厂
2021+
60000
原装现货,欢迎询价
VBsemi
25+
SOT23-3
34424
VBSEMI/微碧半导体
25+
SOT23-3
90000
全新原装现货
可定Silikron
25+
SOT23-3
10000
原装现货假一罚十

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