30V N-Channel MOSFET

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

Battery protection

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

MOSFET

Battery protection

DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON)

30V N-Channel MOSFET

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Battery protection

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages