Battery protection

DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON)

20V N-Channel MOSFET

DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON)

MOSFET

20V N-Channel MOSFET

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MOSFET

MOSFET

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

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Nylon Hose Clamps

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P-CHANNEL MOSFET N-CHANNEL MOSFET

文件：110.94 Kbytes Page：4 Pages

20V N-Channel Enhancement MOS FET

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