| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSF2301 | 20V P-Channel MOSFET Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va | GOOD-ARK 固锝电子 |   | |
SSF2301 | PWM applications DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) | SILIKRON 新硅能微电子 | | |
SSF2301 | P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters | VBSEMI 微碧半导体 | | |
SSF2301 | Advanced MOSFET process technology | SEMIKRON 赛米控丹佛斯 | | |
SSF2301 | MOSFET | SILIKRON 新硅能微电子 | | |
P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters | VBSEMI 微碧半导体 | | ||
PWM applications DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON) | SILIKRON 新硅能微电子 | | ||
20V P-Channel MOSFET DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON) | GOOD-ARK 固锝电子 | | ||
20V P-Channel MOSFET DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) | GOOD-ARK 固锝电子 | | ||
PWM applications DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) | SILIKRON 新硅能微电子 | | ||
P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters | VBSEMI 微碧半导体 | | ||
PWM applications DESCRIPTION The SSF2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2.3A RDS(ON) | SILIKRON 新硅能微电子 | | ||
Advanced MOSFETprocess technology Features and Benefits: Advanced MOSFETprocess technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the lates | SILIKRON 新硅能微电子 | | ||
Advanced MOSFET process technology Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the lates | SILIKRON 新硅能微电子 | | ||
20V P-Channel MOSFET 文件：1.036369 Mbytes Page：7 Pages | GOOD-ARK 固锝电子 | | ||
Advanced MOSFET process technology 文件：572.09 Kbytes Page：8 Pages | SEMIKRON 赛米控丹佛斯 | | ||
20V P-Channel MOSFET 文件：328.1 Kbytes Page：4 Pages | GOOD-ARK 固锝电子 | | ||
MOSFET | SILIKRON 新硅能微电子 | | ||
20V P-Channel MOSFET 文件：322.22 Kbytes Page：4 Pages | GOOD-ARK 固锝电子 | | ||
Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin | NTE | | ||
Reflective Photosensor 文件：49.97 Kbytes Page：2 Pages | PANASONIC 松下 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER 文件：324.91 Kbytes Page：22 Pages | TI 德州仪器 | |
SSF2301产品属性
- 类型
描述
- Configuration：
Single
- VDSS min(V)：
-20
- ID (A)：
-4
- VGS(V)：
12
- VGS(th) min(V)：
-0.5
- RDS(on)max(mΩ)_Vgs=4.5(V)：
65
- RDS(on)max(mΩ)_Vgs=2.5(V)：
100
- Qgtyp @Vgs=4.5(V)(nC)：
9.6
- Qgs(nC)：
1.5
- Qgd(nC)：
2.4
- Pd max(W)：
1.6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILIKRON |
18+ |
SMD |
1130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SILIKRON |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
SF |
20+ |
SOT23 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
SILICON LABS/芯科 |
2025+ |
SOT-23 |
5000 |
原装进口,免费送样品! |
|||
NK/南科功率 |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
SILIKRON |
24+ |
SOT-23 |
5000 |
全新原装正品,现货销售 |
|||
原厂 |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
SILIKRON |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
SILIKRON |
26+ |
SOT-23 |
12000 |
原装，正品 |
|||
SY/江苏顺烨 |
25+ |
SOT-23 |
90000 |
全新原装现货 |
SSF2301芯片相关品牌
SSF2301规格书下载地址
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