100V N-Channel MOSFET

Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a

Advanced trench MOSFET process technology

Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a

MOSFET

100V N-Channel MOSFET

文件：1.19964 Mbytes Page：7 Pages

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

TRANSFORMERS

文件：61.14 Kbytes Page：2 Pages

Pulse Transformers

文件：109.19 Kbytes Page：2 Pages

SM BATTERY HOLDER 1/2AA, ON TAPE

文件：211.31 Kbytes Page：1 Pages

Source Codes for DRA818U/DRA818V

文件：198.39 Kbytes Page：12 Pages