N-Channel 100-V (D-S) MOSFET

文件：987.21 Kbytes Page：8 Pages

N-Ch Enhancement Mode Power MOSFET

文件：574.92 Kbytes Page：4 Pages

MosFET

N-Ch Enhancement Mode Power MOSFET

文件：574.92 Kbytes Page：4 Pages

N-Channel MOSFET uses advanced SGT technology

文件：1.64749 Mbytes Page：5 Pages

N-Ch Enhancement Mode Power MOSFET

文件：469.46 Kbytes Page：4 Pages

MosFET

MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：866.59 Kbytes Page：6 Pages