NPN General Purpose Transistors

NPN General Purpose Transistors Pb Lead(Pb)-Free

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

贴片晶体管

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.3 W（ Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

NPN General Purpose Transistors

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General Purpose Transistors NPN Silicon

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通用三极管

General Purpose Transistors NPN Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● PNP complement: L8550 ● Pb-Free Package is available.

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN EPITAXIAL SILICON TRANSISTOR

2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION • Complement to MMPT8550LT1 • Collector Current:Ic=500mA • Collector Dissipation:Pc=225mW (Tc=25 °C)

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V