电机驱动

SS6226 是为低电压下工作的系统而设计的直 流电机驱动集成电路，双通道低导通电阻。具 备电机正转/反转/停止/刹车四个功能。\n\nSS6226 内置温度保护功能，当芯片温度急剧升 高，内部电路关断内置的功率开关管，切断负载电流。 工作电压范围: VDD =2.4V to 7.2V\n\n低待机电流 : (typ. 0.2uA)\n\n内置过热保护功能\n\n低导通电阻 : 0.6ohm (SOP16)\n\n ;

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6226 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6226 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6226 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6226 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

128K x 8 Bit Static Random Access Memory

128K x 8 Bit Static Random Access Memory The MCM6226BB is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability.