Power Rectifier, Ultrafast - Less Than 100ns- Space Level

150 VOLT,AMP, 25 NS HERMETIC RECTIFIER IN A 106 PACKAGE.\nElectrical Characteristics : (All parameters are at Tc = 25°C unless otherwise specified)RATINGSYMBOLMAXUNITSPeak Inverse VoltagePIV150VoltsMaximum Forward Voltage @TA = 25°C Vf0.875 @ 1VoltsMaximum DC Output Current (TC = 100°C)IoAmpsPeak Si

Power Rectifier, Ultrafast - Less Than 100ns- Space Level

150 VOLT,AMP, 25 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.\nElectrical Characteristics : (All parameters are at Tc = 25°C unless otherwise specified)RATINGSYMBOLMAXUNITSPeak Inverse VoltagePIV150VoltsMaximum Forward Voltage @TA = 25°C Vf0.875 @ 1VoltsMaximum DC Output Current (TC = 100°C)IoAmpsPeak

Power MOSFET(Vdss=-20V)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

THREE PLLs BASED CLOCK GENERATOR FOR DIGITAL TV APPLICATIONS

文件：112.86 Kbytes Page：8 Pages

DM5806 DATA MODULE DIGITAL I/O BOARD

文件：270.47 Kbytes Page：64 Pages

18-A 5-V Input Adjustable Integrated Switching Regulator

文件：203.27 Kbytes Page：11 Pages

LOW LEAKAGE 2.0 AMPS 50 - 150 VOLTS 25 ns HYPERFAST RECOVERY RECTIFIER

文件：148.76 Kbytes Page：2 Pages