LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

肖特基管

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LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

封装/外壳：DO-219AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 150V 2A SUB SMA 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-219AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 150V 2A SUB SMA 分立半导体产品 二极管 - 整流器 - 单

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Description The 2STR2215 is a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STR1215. Features ■ Very low co

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