Hal Effect Bipolar Latches & Switches

The SS2015 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device integrates a voltage regulator, reverse battery protection diode, Hall sensor with dynamic offset cancellation system, temperature compensation circuitry, small \n●4.5V to 24V Operation\n●-40°C to 150°C Superior temperature operation\n●Bipolar technology\n●Open-collector 25 mA output\n●Reverse battery protection\n●Solid-state reliability\n●Resistant to physical stress\n●Small Size-SOT23 3L and SIP 3L\n●Activate with small, commercially available Permanent m;

CMOS High Sensitivity Micropower Hall Latch

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肖特基二极管

SS20150FL系列肖特基二极管，产品采用SOD-123FL标准小体积封装，稳定性强，可靠性高，漏电流小。采用具备压力保护和低正向电压降，采用超小薄型表贴封装。非常适合反向极性保护、低压整流以及DC-DC转换功率管理应用。

2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

Schottky rectifier

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CMOS High Sensitivity Micropower Hall Latch

文件：194.3 Kbytes Page：6 Pages

CMOS High Sensitivity Micropower Hall Latch

文件：194.3 Kbytes Page：6 Pages

CMOS High Sensitivity Micropower Hall Latch

文件：194.3 Kbytes Page：6 Pages

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction