SS12晶体管资料
SS120别名:SS120三极管、SS120晶体管、SS120晶体三极管
SS120生产厂家:
SS120制作材料:Si-NPN
SS120性质:低频或音频放大 (LF)_开关管 (SW)
SS120封装形式:直插封装
SS120极限工作电压:60V
SS120最大电流允许值:0.6A
SS120最大工作频率:<1MHZ或未知
SS120引脚数:3
SS120最大耗散功率:0.8W
SS120放大倍数:
SS120图片代号:C-78
SS120vtest:60
SS120htest:999900
- SS120atest:0.6
SS120wtest:0.8
SS120代换 SS120用什么型号代替:3DK4B,
SS12价格
参考价格:¥0.1560
型号:SS12 品牌:MULTICOMP 备注:这里有SS12多少钱,2026年最近7天走势,今日出价,今日竞价,SS12批发/采购报价,SS12行情走势销售排行榜,SS12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SS12 | 丝印代码:SS12;Schottky Rectifier Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip−bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse po | ONSEMI 安森美半导体 | ||
SS12 | 丝印代码:SS12;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * Moisture Sensitivity Level 1 | PACELEADER 霈峰 | ||
SS12 | 丝印代码:SS12;Surface Mount Schottky Barrier Rectifier 文件:472.85 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
SS12 | 丝印代码:SS12;Schottky Barrier Rectifiers 文件:551.83 Kbytes Page:4 Pages | BILIN 银河微电 | ||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications | UNSEMI 优恩半导体 | |||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications | UNSEMI 优恩半导体 | |||
丝印代码:SS12;Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
丝印代码:SS12;Power MOSFET 170 mAmps, 100 Volts Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
丝印代码:SS12;Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for | ONSEMI 安森美半导体 | |||
丝印代码:SS12;Surface Mount Schottky Power Rectifier Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar | ONSEMI 安森美半导体 | |||
丝印代码:SS12;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V 文件:307.38 Kbytes Page:5 Pages | E-CMOS 飞虹高科 | |||
丝印代码:SS12;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V 文件:307.38 Kbytes Page:5 Pages | E-CMOS 飞虹高科 | |||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier 文件:475.95 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier 文件:616.3 Kbytes Page:3 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier 文件:323.77 Kbytes Page:3 Pages | LEIDITECH 雷卯电子 | |||
丝印代码:SS12;SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件:808.9 Kbytes Page:3 Pages | PJSEMI 平晶半导体 | |||
丝印代码:SS12;Surface Mount Schottky Barrier Rectifier 文件:275.97 Kbytes Page:3 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:SS12;SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件:533.94 Kbytes Page:3 Pages | PJSEMI 平晶半导体 | |||
丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor 文件:86.37 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;PNP Transistor 文件:69.19 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;High Efficiency DC-DC Converters 文件:1.9268 Mbytes Page:20 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) NPN Transistor 文件:88.79 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) PNP Transistor 文件:132.34 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;PNP Transistor 文件:106.39 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor 文件:100 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 3 A, Low VCE(sat) PNP Transistor 文件:63.31 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 6.0 A, Low VCE(sat) PNP Transistor 文件:106.56 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) PNP Transistor 文件:102.7 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) PNP Transistor 文件:108.33 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor 文件:87.66 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 3 A, Low VCE(sat) PNP Transistor 文件:134.14 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 6.0 A, Low VCE(sat) PNP Transistor 文件:102.78 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;NPN Transistor 文件:133.48 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) PNP Transistor 文件:60.62 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 7.0 A, Low VCE(sat) NPN Transistor 文件:88.25 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) NPN Transistor 文件:131.7 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SS12 | Surface Mount Schottky Power Rectifier Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar | ONSEMI 安森美半导体 | ||
SS12 | 1.0 Ampere Schottky Barrier Rectifiers Features • Glass passivated junctions. • High current capability, low VF. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. | FAIRCHILD 仙童半导体 | ||
SS12 | Surface-Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Auto | VISHAYVishay Siliconix 威世威世科技公司 | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS For Use in Low Voltage High Frequency Inverters, Free Wheeling and Polarity Protection Application DO-214AC (SMA) Surface Mount Package | CDIL | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low cost * Pb / RoHS Free | EIC | ||
SS12 | 1A SCHOTTKY SMA DIODES
| LRC 乐山无线电 | ||
SS12 | 1 Amp Schottky Rectifier 20 to 100 Volts Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Forward Voltage • Guard Ring Protection • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 | MCC | ||
SS12 | Surface Mount Schottky Rectifiers FEATURES Io 1.0A VRRM 20V-100V High surge current capability Metal to silicon rectifier, majority carrier conduction Low power loss, high eciency Guard ring for over-voltage protection | RFE RFE international | ||
SS12 | SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE SCHOTTKY DIODE GLASS PASSIVATED BRIDGE RECTIFIER | RFE RFE international | ||
SS12 | 1 Amp Schottky Rectifier 20 to 100 Volts Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Forward Voltage • Guard Ring Protection • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 | MCC | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere VOLTAGE - 20 TO 100 Volts CURRENT -1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low po | SURGE | ||
SS12 | 1.0 AMP. Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC | TSC 台湾半导体 | ||
SS12 | 1.0A Surface Mount Schottky Barrier Rectifiers Features • High current capability • High surge current capability • High reliability • High efficiency • Low power loss • Low forward voltage drop • Low cost • Pb / RoHS Free | SUNMATE 森美特 | ||
SS12 | SCHOTTKY BARRIER RECTIFIER VOLTAGE:20-100V CURRENT:1.0A FEATURES · High reliability · Low leakage · Low forward voltage · High current capability · Super fast switching speed · High surge capability · Good for switching mode circuit | CHONGQING 平伟实业 | ||
SS12 | CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · For surface mount applications · Guard ring for overvoltage protection · Low power loss, high efficiency · High current capabilit | DAESAN | ||
SS12 | SCHOTTKY BARRIER RECTIFIER Features · Low profile package · Ideal for automated placement · Low power losses, high efficiency · Low forward voltage drop · High surge capability · High temperature soldering : 260℃/10 seconds at terminals · Component in accordance to RoHS 2011/65/EU and WEEE 2002/96/EC | DAESAN | ||
SS12 | SCHOTTKY BARRIER RECTIFIER Features · Low profile package · Ideal for automated placement · Low power losses, high efficiency · Low forward voltage drop · High surge capability · High temperature soldering: 260℃/10 seconds at terminals · Component in accordance to RoHS 2011/65/EU and WEEE 2002/96/EC | DAESAN | ||
SS12 | 1.0 AMP. Surface Mount Schotty Barrier Rectifiers Features ◇ For surface mounted application ◇ Easy pick and place ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low VF ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laborato | DAYA 大亚电器 | ||
SS12 | TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES * Glass passivated junction * ldeal for surface mounted applications * Low leakage current | DCCOM 道全 | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● For surface mounted applications ● Low reverse leakage ● Built-in strain relief,ideal for automated placement | DIOTECH | ||
SS12 | SS12 THRU SS120 SCHOTTKY RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction, majority carrier conduction Low Power Loss, High Efficiency Built-in strain relief, ideal for automated placement High forward surge curren | SMCDIODE 桑德斯微电子 | ||
SS12 | 1.0AMP SCHOTTKY BARRIER RECTIFIERS SMA PACKAGE FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLAS 威伦电子 | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward vol | CHENDA 辰达半导体 | ||
SS12 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward vol | CHENDA 辰达半导体 |
SS12产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
20
- VF Max (V):
0.47
- IRM Max (µA):
45
- IO(rec) Max (A):
1
- IFSM Max (A):
60
- Package Type:
SMA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
16+ |
TO-277A(SMPC) |
10300 |
进口原装现货/价格优势! |
|||
GeneralSemiconductor(GSI) |
25+ |
DO-214 |
2000 |
||||
VISHAY SEMICONDUCTOR |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
25+ |
DO-214AC |
33500 |
全新进口原装现货,假一罚十 |
|||
VISHAY/威世 |
2025+ |
TO-277A(SMPC) |
5000 |
原装进口,免费送样品! |
|||
VISHAY/威世 |
26+ |
SMD |
76200 |
全新原装现货库存,本公司承诺原装正品假一赔百 |
|||
VISHAY/威世 |
21+ |
DO-214AC |
8080 |
只做原装,质量保证 |
|||
VISHAY/威世 |
SMD |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
PANJIT |
24+ |
SMA |
7850 |
只做原装正品现货或订货假一赔十! |
|||
SCHMID-M |
25+ |
全新-电源模块 |
10238 |
SCHMID-M电源模块SS120909T-1W交期短价格好#即刻询购立享优惠#长期有排单订 |
SS12芯片相关品牌
SS12规格书下载地址
SS12参数引脚图相关
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DdatasheetPDF页码索引
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