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SS12晶体管资料

  • SS120别名:SS120三极管、SS120晶体管、SS120晶体三极管

  • SS120生产厂家

  • SS120制作材料:Si-NPN

  • SS120性质:低频或音频放大 (LF)_开关管 (SW)

  • SS120封装形式:直插封装

  • SS120极限工作电压:60V

  • SS120最大电流允许值:0.6A

  • SS120最大工作频率:<1MHZ或未知

  • SS120引脚数:3

  • SS120最大耗散功率:0.8W

  • SS120放大倍数

  • SS120图片代号:C-78

  • SS120vtest:60

  • SS120htest:999900

  • SS120atest:0.6

  • SS120wtest:0.8

  • SS120代换 SS120用什么型号代替:3DK4B,

SS12价格

参考价格:¥0.1560

型号:SS12 品牌:MULTICOMP 备注:这里有SS12多少钱,2026年最近7天走势,今日出价,今日竞价,SS12批发/采购报价,SS12行情走势销售排行榜,SS12报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SS12

丝印代码:SS12;Schottky Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip−bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse po

ONSEMI

安森美半导体

SS12

丝印代码:SS12;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * Moisture Sensitivity Level 1

PACELEADER

霈峰

SS12

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

文件:472.85 Kbytes Page:3 Pages

YFWDIODE

佑风微

SS12

丝印代码:SS12;Schottky Barrier Rectifiers

文件:551.83 Kbytes Page:4 Pages

BILIN

银河微电

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

UNSEMI

优恩半导体

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

UNSEMI

优恩半导体

丝印代码:SS12;Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

丝印代码:SS12;Power MOSFET 170 mAmps, 100 Volts

Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

丝印代码:SS12;Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

ONSEMI

安森美半导体

丝印代码:SS12;Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

ONSEMI

安森美半导体

丝印代码:SS12;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

文件:307.38 Kbytes Page:5 Pages

E-CMOS

飞虹高科

丝印代码:SS12;1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

文件:307.38 Kbytes Page:5 Pages

E-CMOS

飞虹高科

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

文件:475.95 Kbytes Page:3 Pages

YFWDIODE

佑风微

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

文件:616.3 Kbytes Page:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

文件:323.77 Kbytes Page:3 Pages

LEIDITECH

雷卯电子

丝印代码:SS12;SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件:808.9 Kbytes Page:3 Pages

PJSEMI

平晶半导体

丝印代码:SS12;Surface Mount Schottky Barrier Rectifier

文件:275.97 Kbytes Page:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:SS12;SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

文件:533.94 Kbytes Page:3 Pages

PJSEMI

平晶半导体

丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor

文件:86.37 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;PNP Transistor

文件:69.19 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;High Efficiency DC-DC Converters

文件:1.9268 Mbytes Page:20 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) NPN Transistor

文件:88.79 Kbytes Page:6 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件:132.34 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;PNP Transistor

文件:106.39 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor

文件:100 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 3 A, Low VCE(sat) PNP Transistor

文件:63.31 Kbytes Page:6 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件:106.56 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) PNP Transistor

文件:102.7 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件:108.33 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 1 A, Low VCE(sat) PNP Transistor

文件:87.66 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 3 A, Low VCE(sat) PNP Transistor

文件:134.14 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 6.0 A, Low VCE(sat) PNP Transistor

文件:102.78 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;NPN Transistor

文件:133.48 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 8.0 A, Low VCE(sat) PNP Transistor

文件:60.62 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 7.0 A, Low VCE(sat) NPN Transistor

文件:88.25 Kbytes Page:5 Pages

ONSEMI

安森美半导体

丝印代码:SS12;12 V, 4.0 A, Low VCE(sat) NPN Transistor

文件:131.7 Kbytes Page:5 Pages

ONSEMI

安森美半导体

SS12

Surface Mount Schottky Power Rectifier

Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The clip −bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polar

ONSEMI

安森美半导体

SS12

1.0 Ampere Schottky Barrier Rectifiers

Features • Glass passivated junctions. • High current capability, low VF. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

FAIRCHILD

仙童半导体

SS12

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Auto

VISHAYVishay Siliconix

威世威世科技公司

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS For Use in Low Voltage High Frequency Inverters, Free Wheeling and Polarity Protection Application DO-214AC (SMA) Surface Mount Package

CDIL

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low cost * Pb / RoHS Free

EIC

SS12

1A SCHOTTKY SMA DIODES

LRC

乐山无线电

SS12

1 Amp Schottky Rectifier 20 to 100 Volts

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Forward Voltage • Guard Ring Protection • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

MCC

SS12

Surface Mount Schottky Rectifiers

FEATURES Io 1.0A VRRM 20V-100V High surge current capability Metal to silicon rectifier, majority carrier conduction Low power loss, high eciency Guard ring for over-voltage protection

RFE

RFE international

SS12

SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers

SUPER FAST RECOVERY DIODE SCHOTTKY DIODE GLASS PASSIVATED BRIDGE RECTIFIER

RFE

RFE international

SS12

1 Amp Schottky Rectifier 20 to 100 Volts

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Forward Voltage • Guard Ring Protection • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

MCC

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere

VOLTAGE - 20 TO 100 Volts CURRENT -1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low po

SURGE

SS12

1.0 AMP. Surface Mount Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

TSC

台湾半导体

SS12

1.0A Surface Mount Schottky Barrier Rectifiers

Features • High current capability • High surge current capability • High reliability • High efficiency • Low power loss • Low forward voltage drop • Low cost • Pb / RoHS Free

SUNMATE

森美特

SS12

SCHOTTKY BARRIER RECTIFIER

VOLTAGE:20-100V CURRENT:1.0A FEATURES · High reliability · Low leakage · Low forward voltage · High current capability · Super fast switching speed · High surge capability · Good for switching mode circuit

CHONGQING

平伟实业

SS12

CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts

Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · For surface mount applications · Guard ring for overvoltage protection · Low power loss, high efficiency · High current capabilit

DAESAN

SS12

SCHOTTKY BARRIER RECTIFIER

Features · Low profile package · Ideal for automated placement · Low power losses, high efficiency · Low forward voltage drop · High surge capability · High temperature soldering : 260℃/10 seconds at terminals · Component in accordance to RoHS 2011/65/EU and WEEE 2002/96/EC

DAESAN

SS12

SCHOTTKY BARRIER RECTIFIER

Features · Low profile package · Ideal for automated placement · Low power losses, high efficiency · Low forward voltage drop · High surge capability · High temperature soldering: 260℃/10 seconds at terminals · Component in accordance to RoHS 2011/65/EU and WEEE 2002/96/EC

DAESAN

SS12

1.0 AMP. Surface Mount Schotty Barrier Rectifiers

Features ◇ For surface mounted application ◇ Easy pick and place ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low VF ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laborato

DAYA

大亚电器

SS12

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES * Glass passivated junction * ldeal for surface mounted applications * Low leakage current

DCCOM

道全

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● For surface mounted applications ● Low reverse leakage ● Built-in strain relief,ideal for automated placement

DIOTECH

SS12

SS12 THRU SS120 SCHOTTKY RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction, majority carrier conduction Low Power Loss, High Efficiency Built-in strain relief, ideal for automated placement High forward surge curren

SMCDIODE

桑德斯微电子

SS12

1.0AMP SCHOTTKY BARRIER RECTIFIERS SMA PACKAGE

FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * High reliability * RoHS product for packing code suffix G Halogen free product for packing code suffix H

WILLAS

威伦电子

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward vol

CHENDA

辰达半导体

SS12

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward vol

CHENDA

辰达半导体

SS12产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    20

  • VF Max (V):

    0.47

  • IRM Max (µA):

    45

  • IO(rec) Max (A):

    1

  • IFSM Max (A):

    60

  • Package Type:

    SMA

更新时间:2026-5-14 15:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
16+
TO-277A(SMPC)
10300
进口原装现货/价格优势!
GeneralSemiconductor(GSI)
25+
DO-214
2000
VISHAY SEMICONDUCTOR
25+
SMD
918000
明嘉莱只做原装正品现货
VISHAY/威世
25+
DO-214AC
33500
全新进口原装现货,假一罚十
VISHAY/威世
2025+
TO-277A(SMPC)
5000
原装进口,免费送样品!
VISHAY/威世
26+
SMD
76200
全新原装现货库存,本公司承诺原装正品假一赔百
VISHAY/威世
21+
DO-214AC
8080
只做原装,质量保证
VISHAY/威世
SMD
23+
6000
专业配单原装正品假一罚十
PANJIT
24+
SMA
7850
只做原装正品现货或订货假一赔十!
SCHMID-M
25+
全新-电源模块
10238
SCHMID-M电源模块SS120909T-1W交期短价格好#即刻询购立享优惠#长期有排单订

SS12数据表相关新闻